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> Renesas Electronics Achieves Large-Scale Memory Operation in Fin-Shaped MONOS Flash Memory for Industry’s First High-Performance, Highly Reliable MCUs in 16/14nm Process Nodes and Beyond
Renesas Electronics Achieves Large-Scale Memory Operation in Fin-Shaped MONOS Flash Memory for Industry’s First High-Performance, Highly Reliable MCUs in 16/14nm Process Nodes and Beyond
Renesas Electronics Achieves Large-Scale Memory Operation in Fin-Shaped MONOS Flash Memory for Industry’s First High-Performance, Highly Reliable MCUs in 16/14nm Process Nodes and Beyond
TOKYO, Japan, December 6, 2017 ― Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced that it has successfully confirmed large-scale memory operation in a split-gate metal-oxide nitride oxide silicon (SG-MONOS, Note 1) process using fin-shaped 3D transistors for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer.
For further information, please access the link below:
https://www.renesas.com/en-hq/about/press-center/news/2017/news20171206.html