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Renesas Electronics Achieves Industry’s Lowest Standby Power of 13.7 nW/Mbit and 1.84 ns High-Speed Readout with New Embedded SRAM that Implements New Circuit Technology with SOTB Structure
Renesas Electronics Achieves Industry’s Lowest Standby Power of 13.7 nW/Mbit and 1.84 ns High-Speed Readout with New Embedded SRAM that Implements New Circuit Technology with SOTB Structure
Prototyped Low-Power Embedded SRAM Enables Battery-Free Operation and Extended Battery Lifetimes for IoT, Home Electronics, and Healthcare Applications
Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the successful development of a new low-power SRAM circuit technology that can be embedded in application specific standard products (ASSPs) for Internet of Things (IoT), home electronics, and healthcare applications. The new technology provides a function for switching dynamically with low power overhead between active operation in which the CPU core performs read and write operations of the embedded SRAM, and the standby mode in which the stored data is retained.
Detail available at https://www.renesas.com/en-hq/about/press-center/news/2017/news20170608.html