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Renesas Electronics Announces World’s First Development Fin-Shaped MONOS Flash Memory Cells for High-Performance, Highly Reliable Microcontrollers in 16/14nm Process Nodes and Beyond

Enables High-Density Embedded Flash memory That Can Be Embedded Into State-of-the-Art High-Performance Logic Process

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced its successful development of the world’s first (Note 1) split-gate metal-oxide nitride oxide silicon (SG-MONOS, Note 2) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer. SG-MONOS technology is reliable for use in automotive applications and Renesas currently mass produces 40nm MCUs using this technology, and 28nm MCUs are under development. The successful development shows promising scalability of the SG-MONOS technology to 16/14nm process nodes and beyond.

For more detail, please visit this url:
https://www.renesas.com/en-hq/about/press-center/news/2016/news20161207.html