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Renesas Electronics Develops Two-Port On-Chip SRAM Specialized in Improving Video Processing Performance of Vehicles for the Autonomous-Driving Era

Combines High Integration of 6.05 Mb/mm2 (1.8× Previous Level) and 313-Picosecond Fast Read Operation

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the successful development of a new two-port on-chip Static Random Access Memory (SRAM) for use in system-on-chips (SoCs) for in-vehicle infotainment systems. The new on-chip SRAM will be used as video processing buffer memory in high-performance SoCs that will play an important role in making the autonomous-driving vehicles of the future safer and more reliable. The new SRAM is optimized for parallel processing of video data and will enable sophisticated video data processing such as obstacle recognition utilizing real-time processing of high-resolution vehicle camera videos and augmented reality (AR) display on the windshield. In prototypes fabricated using a cutting-edge 16-nanometer (nm) process, the new SRAM achieved a fast read access time of 313 picoseconds (ps) at the low voltage of 0.8 V. Single-port SRAM cells are used to implement two-port SRAM functionality that allows independent read and write operations, making it possible to achieve fast read access alongside power efficiency and compact chip size.

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