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Renesas Electronics Introduces 8th-Generation IGBTs that Improve System Power Efficiency Through Industry-Leading Ultra-Low Loss Features

IGBTs Minimize Power Loss in Power Conversion Systems Such as Power Conditioners for Solar Power Generation Systems and UPS Products

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the availability of six new products in the 8th-generation G8H Series of insulated gate bipolar transistor (IGBT) lineup that minimize conversion losses in power conditioners for solar power generation systems and reduce inverter applications in uninterruptable power supply (UPS) systems. Six new product versions, rated at 650 V/40 A, 50 A, and 75 A, and at 1,250 V/25 A, 40 A, and 75 A, are being released. Renesas has also achieved the industry’s first TO-247 plus package for a 1,250V IGBT with built-in diode, which offers system manufacturers greater circuit configuration flexibility.
For more detail, please visit this url:
http://www.renesas.com/press/news/2016/news20160310.jsp