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Renesas Electronics Introduces 16- and 32-Megabit Advanced Low Power SRAMs with Over 500 Times the Resistance to Soft Errors Compared to Full CMOS Memory Cells

Contributes to Longer Backup Battery Service Life Reducing Standby Current by Half
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, announced the release of two new series of Advanced Low Power SRAM (Advanced LP SRAM), the leading type of low-power-consumption SRAM, designed to provide enhanced reliability and longer backup battery life for applications such as factory automation (FA), industrial equipment, and the smart grid. Fabricated using the 110-nanometer (nm) process, the new RMLV1616A Series of 16-megabit (Mb) devices and the RMWV3216A Series of 32 Mb devices feature an innovative memory cell technology that dramatically improves reliability and contributes to longer battery operation.
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http://www.renesas.com/press/news/2015/news20150722.jsp