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Renesas Electronics Announces Development of SRAM Using Leading-Edge 16 nm FinFET for Automotive Information Systems

Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced the development of a new circuit technology for automotive information SoCs (system on chips) at 16 nanometer (nm) and beyond. Using this new circuit technology, Renesas tested the prototype of an SRAM, at the 16 nm node as the cache memory for CPU and real-time image processing blocks in an SoC, and successfully confirmed that this SRAM operates at the high speed of 641 ps (picosecond: 1/1,000,000,000,000 of a second) under the low-voltage condition of 0.7 V.

Recently, automotive information systems, such as car navigation systems and advanced driver assistance systems (ADAS), are designed with the automatic driving systems of the future in mind, and have seen significant evolution. As a result, there are now strong demands for increased performance in aspects such as lower voltage operation and higher operating speeds in the CPU and real-time image processing, and the planar MOSFET devices used up to now are said to have reached their limits.

To address these demands, the new FinFET adopts a finned structure, to suppress power consumption and increase performance. It is, however, difficult to optimize the circuit constants in these FinFETs, and the development of new circuit design technologies has become an issue.

For more detail, please visit the following URL.
http://www.renesas.com/press/news/2014/news20141217.jsp