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2019.6.25  Renesas Electronics Announces Change of Representative Director

25 Jun 2019

TOKYO, Japan – Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today made the following decision about the change of Representative Director at a meeting of the Board of Directors held on June 25, 2019 based on recommendations from the company’s Nomination Committee, a voluntary advisory body reporting to the company’s Board of Directors.

For full article, please access link : https://www.renesas.com/sg/en/about/press-center/news/2019/news20190625a.html

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2019.6.25  Renesas Names CFO Hidetoshi Shibata Next CEO

25 Jun 2019

TOKYO, Japan – Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced that following the resignation of current CEO Bunsei Kure from his positions as Representative Director, President and CEO on June 30, 2019, Hidetoshi Shibata has been named its Representative Director, President and CEO, effective July 1, 2019.

The newly appointed President & CEO, Hidetoshi Shibata joined Renesas in 2013 when the company was in crisis, and as Executive Vice President, Member of the Board and CFO, led the structural reform measures, such as personnel cost reductions, and the reorganization of production sites, etc. After the structural reforms, he was instrumental in leading the acquisitions of two U.S.-based semiconductor companies, Intersil Corporation and Integrated Device Technology, Inc., which are critical measures for the company’s future growth.

The Nomination Committee, an advisory body reporting to the Board of Directors, reported the following reasons for selecting Hidetoshi Shibata as candidate for the next President and CEO.
“We evaluated Mr. Shibata highly for his experience in leading structural reforms, which will enable him to leverage the lessons learned to take effective measures quickly in order to break away from the current unfavorable business performance and stock price stagnation. When considering the company’s rebuilding and further growth amidst the rapidly changing semiconductor industry, we determined that he is best qualified to be the next President and CEO.”

“Whilst we face short-term challenges that require concerted efforts across the company, I believe that Renesas is well placed in our focus markets to continue to create innovative, sustainable solutions for our customers and society at large,” said Hidetoshi Shibata, Executive Vice President, Member of the Board and CFO. “I would like to thank the Board of Directors for their endorsement. I am humbled and ready, together with our hard-working colleagues, to lead Renesas into the future to continue to provide customers with industry-leading solutions, to maintain the positive momentum of the IDT integration process and to restore growth and corporate value for all the company’s stakeholders”.

https://www.renesas.com/sg/en/about/press-center/news/2019/news20190625b.html

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2019.6.16  Renesas Electronics and SAIC Volkswagen Unveil Joint Laboratory to Accelerate Development for China’s Automotive Market

TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced it has established the “Automotive Electronic Joint Laboratory” with SAIC Volkswagen Automobile Co., (“SVW”). The SAIC-Volkswagen-Renesas Joint Laboratory will accelerate research and development efforts to support emerging automotive electronics applications, starting with cockpit and vehicle control, for the Chinese automotive market.

The joint laboratory will combine Renesas’ advanced microcontrollers, system-on-chips and software expertise with SAIC Volkswagen’s development capabilities, supporting SAIC Volkswagen to develop next-generation automotive electronic platforms with software module development and system integration capabilities to meet the demands of the Chinese automotive electronics industry.

“We are excited to partner with SAIC Volkswagen and combine our respective expertise areas to strengthen business with the Chinese market and further automotive design innovation,” said Tomomitsu Maoka, Senior Vice President of Renesas Electronics Corporation and Chairman of Renesas Electronics China. “Through this joint laboratory, we will explore emerging and leading technologies that can drive new innovations for the automotive industry in China.”

“Under the new establishment of a joint laboratory, we look forward to further strengthening our cooperation with Renesas,” said Dr. Qingwen Wu, Executive Director at SVW. “Through our close collaboration in the field of vehicle body electronics and in new fields such as digital cockpit and smart connectivity, we aim to develop a hardware and software platform that will enable us to attain leading market positions.”

The two companies unveiled the joint laboratory in Anting, Shanghai, China on April 15, 2019.

For full article, please follow the link : https://www.renesas.com/sg/en/about/press-center/news/2019/news20190610.html

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2019.6.13  Renesas Electronics Develops New Processing-In-Memory Technology for Next-Generation AI Chips that Achieves AI Processing Performance of 8.8 TOPS/W

TOKYO, Japan ― Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced it has developed an AI accelerator that performs CNN (convolutional neural network) processing at high speeds and low power to move towards the next generation of Renesas embedded AI (e-AI), which will accelerate increased intelligence of endpoint devices. A Renesas test chip featuring this accelerator has achieved the power efficiency of 8.8 TOPS/W (Note 1), which is the industry’s highest class of power efficiency. The Renesas accelerator is based on the processing-in-memory (PIM) architecture, an increasingly popular approach for AI technology, in which multiply-and-accumulate operations are performed in the memory circuit as data is read out from that memory.

To create the new AI accelerator, Renesas developed the following three technologies. The first is a ternary-valued (-1, 0, 1) SRAM structure PIM technology that can perform large-scale CNN computations. The second is an SRAM circuit to be applied with comparators that can read out memory data at low power. The third is a technology that prevents calculation errors due to process variations in the manufacturing. Together, these technologies achieve both a reduction in the memory access time in deep learning processing and a reduction in the power required for the multiply-and-accumulate operations. Thus, the new accelerator achieves the industry’s highest class of power efficiency while maintaining an accuracy ratio more than 99 percent when evaluated in a handwritten character recognition test (MNIST).

Renesas presented these results on June 13, at the 2019 Symposia on VLSI Technology and Circuits in Kyoto, Japan, June 9-14, 2019. Renesas also demonstrated real-time image recognition using a prototype AI module in which this test chip, powered by a small battery, was connected with a microcontroller, a camera, other peripheral devices, and development tools at the demonstration session.

Until now, the PIM architecture was unable to achieve an adequate accuracy level for large-scale CNN computations with single-bit calculations since the binary (0,1) SRAM structure was only able to handle data with values 0 or 1. Furthermore, process variations in the manufacturing resulted in a reduction in the reliability of these calculations, and workarounds were required. Renesas has now developed technologies that resolve these issues and will be applying these, as a leading-edge technology that can implement revolutionary AI chips of the future, to the next generation of e-AI solutions for applications such as wearable equipment and robots that require both performance and power efficiency.

For full article, please view link as : https://www.renesas.com/sg/en/about/press-center/news/2019/news20190613.html

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2019.6.12  Renesas Electronics Develops Low-Power Technology for Embedded Flash Memory Based on SOTB™ Process to Enable Energy Harvesting and Eliminate Need for Batteries

TOKYO, Japan ― Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the development of new low-power technology for use in embedded flash memory based on a 65 nanometer (nm) SOTB™ (Silicon On Thin Buried Oxide) process. Available with 1.5 MB capacity, it is the world’s first embedded 2T-MONOS (2 Transistors-Metal Oxide Nitride Oxide Silicon) flash memory based on 65nm SOTB technology (Note 1). With the addition of a new circuit technology that reduces the power consumption of the peripheral circuits on flash memory, Renesas achieves read energy as low as 0.22 picojoules per bit (pJ/bit) at an operating frequency of 64 MHz – among the world’s lowest levels for embedded flash memory on an MCU. The newly developed low-power technology for peripheral circuits comprises circuit technology that (1) reduces energy consumption when sensing data in memory and (2) reduces the amount of transmission energy consumed when read data is transmitted to an external destination. Together, these advances substantially reduce energy consumption when reading data from the memory.

Renesas presented these results on June 12 at the 2019 Symposia on VLSI Technology and Circuits in Kyoto, Japan, June 9-14, 2019.

The new SOTB-based technology has already been implemented in the Renesas R7F0E embedded controller, which is intended specifically for energy harvesting applications. Renesas’ exclusive SOTB process technology dramatically reduces power consumption in both the active and standby states. Power consumption in these two states had previously been a tradeoff: Lower power consumption in one generally meant higher power consumption in the other. The new technology substantially reduces power consumption when reading data from the flash memory. In contrast to non-SOTB 2T-MONOS flash memory, which requires a memory read current of about 50 µA/MHz, the read current is reduced to a mere approximately 6 µA/MHz. This is equivalent to a read energy level of 0.22 pJ/bit, one of the lowest levels for embedded flash memory on an MCU. The new technology also contributes greatly to the achievement of a low-active read current of 20 µA/MHz on the R7F0E, among the best in the industry.

For full article, please follow the link : https://www.renesas.com/sg/en/about/press-center/news/2019/news20190612.html

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2019.6.12  Renesas Electronics Develops New Flash Memory Technology Achieving Larger Capacities, Faster Read Operation, and OTA Support in Automotive Microcontrollers Based on Next-Generation 28nm Process

TOKYO, Japan ― Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the development of a new flash memory technology that achieves larger memory capacities, higher readout speeds, and over-the-air (OTA) support for automotive microcontrollers (MCUs) using the next-generation 28nm process. This new technology achieves the industry’s largest capacity of embedded flash memory on an MCU – 24 MB – and reaches 240 MHz random access read speeds, the industry’s fastest for embedded flash memory. The technology also achieves low noise write operations when performing OTA wireless software updates, and high-speed and robust operation for OTA software updates.

Renesas presented these results on June 12 at the 2019 Symposia on VLSI Technology and Circuits in Kyoto, Japan, June 9-14, 2019.

Recently in leading-edge technologies used in car systems, such as autonomous driving and electric drive, there have been increasing demands for larger embedded flash memory capacities in the MCUs due to the increasing scale of the control software. The introduction of OTA technology accelerates the demand for larger capacities to assure adequate storage area for updated programs. Since it is necessary to assure real-time performance given the addition of new functions such as functional safety, faster random access read times from the flash memory are also strongly desired. Furthermore, regarding OTA, three things are now strongly desired. First is low-noise design so that the updated software can be stored reliably even when the car is operating. Second is reduced down time during the software switching. Third is robustness to avoid incorrect operations even if unintentional interruptions occur when updating or switching software.

For full article, please access link as : https://www.renesas.com/sg/en/about/press-center/news/2019/news20190612b.html

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